SD1726 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer STMicroelectronics
Mount Screw, Surface Mount
Mounting Type Surface Mount
Package / Case M174
Number of Pins 174Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 55V
Number of Elements 1 Element
hFEMin 18
Operating Temperature 200°C TJ
Packaging Tray
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC 55V
Max Power Dissipation 318W
Terminal Position RADIAL
Terminal Form FLAT
Current Rating 20A
Base Part Number SD1726
Pin Count 4
JESD-30 Code O-PRFM-F4
Configuration SINGLE
Power Dissipation 318W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 1.4A 6V
Gain 14dB
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 20A
Highest Frequency Band HIGH FREQUENCY B
Collector-Base Capacitance-Max 220pF
Height 7.11mm
Length 24.89mm
Width 12.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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