START499ETR Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer STMicroelectronics
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
hFEMin 160
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Frequency 42GHz
Base Part Number START499
Pin Count 4
Element Configuration Single
Power Dissipation 600mW
Case Connection EMITTER
Output Power 600mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 42 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 160mA 4V
Gain 15dB
Transition Frequency 42000MHz
Max Breakdown Voltage 4.5V
Frequency - Transition 1.9GHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 3.3dB @ 1.8GHz
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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