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STB13007DT4 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier TO-263-P011P6
Collector-Emitter Breakdown Voltage 400V
Collector-Emitter Saturation Voltage 3V
Number of Elements 1 Element
hFEMin 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC 400V
Max Power Dissipation 80W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB13007
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 5A
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
Max Junction Temperature (Tj) 150°C
Height 4.83mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STB13007DT4 Documents

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