STGF10NB60SD Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
Test Conditions 480V, 10A, 1k Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 600V
Max Power Dissipation 25W
Current Rating 10A
Base Part Number STGF10
Pin Count 3
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 460ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 23A
Reverse Recovery Time 37ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Max Breakdown Voltage 600V
Turn On Time 1160 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Turn Off Time-Nom (toff) 3100 ns
Gate Charge 33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 20mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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