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STGW25H120F2 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW25
JESD-30 Code R-PSFM-T3
Element Configuration Single
Input Type Standard
Power - Max 375W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 41 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Turn Off Time-Nom (toff) 339 ns
IGBT Type Trench Field Stop
Gate Charge 100nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 29ns/130ns
Switching Energy 600μJ (on), 700μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STGW25H120F2 Documents

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