STMicroelectronics STGW60V60DF Single IGBTs
600V 80A
IN STOCK
: 20000
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Mult. : 1
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STGW60V60DF Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | STMicroelectronics | |
| Factory Lead Time | 20 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 2.35V | |
| Test Conditions | 400V, 60A, 4.7 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 375W | |
| Base Part Number | STGW60 | |
| Element Configuration | Single | |
| Power Dissipation | 375W |
| Input Type | Standard | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 80A | |
| Reverse Recovery Time | 74ns | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 334nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Td (on/off) @ 25°C | 60ns/208ns | |
| Switching Energy | 750μJ (on), 550μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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STGW60V60DF Documents
Download datasheets and manufacturer documentation for STGW60V60DF
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