STGWA40H120DF2 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer STMicroelectronics
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 40A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 468W
Base Part Number STGWA40
Element Configuration Single
Input Type Standard
Power - Max 468W
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 80A
Reverse Recovery Time 488 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 158nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 18ns/152ns
Switching Energy 1mJ (on), 1.32mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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