STMicroelectronics STL8DN10LF3 MOSFETs Transistors Arrays
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STL8DN10LF3 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | STMicroelectronics | |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 50.6 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | Automotive, AEC-Q101, STripFET™ III | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 70W | |
| Terminal Form | FLAT | |
| Base Part Number | STL8 | |
| JESD-30 Code | R-PDSO-F6 | |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 70W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 8.7 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V | |
| Rise Time | 9.6ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Fall Time (Typ) | 5.2 ns | |
| Continuous Drain Current (ID) | 20A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.05Ohm | |
| Drain to Source Breakdown Voltage | 100V | |
| Pulsed Drain Current-Max (IDM) | 31.2A | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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STL8DN10LF3 Documents
Download datasheets and manufacturer documentation for STL8DN10LF3
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