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STS4DPF20L Tech Specifications
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | STMicroelectronics | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Mounting Type | Surface Mount | |
Mount | Surface Mount | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Turn Off Delay Time | 125 ns | |
Number of Elements | 2 Elements | |
Series | STripFET™ | |
Packaging | Tape & Reel (TR) | |
Operating Temperature | -55°C~150°C TJ | |
JESD-609 Code | e4 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Resistance | 80mOhm | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Additional Feature | LOW THRESHOLD | |
Voltage - Rated DC | -20V | |
Max Power Dissipation | 2W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | -4A | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | STS4D | |
Pin Count | 8 |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2W | |
Turn On Delay Time | 25 ns | |
Power - Max | 1.6W | |
FET Type | 2 P-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 80m Ω @ 2A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V | |
Rise Time | 35ns | |
Fall Time (Typ) | 35 ns | |
Continuous Drain Current (ID) | 4A | |
Threshold Voltage | 1.6V | |
Gate to Source Voltage (Vgs) | 16V | |
Drain Current-Max (Abs) (ID) | 4A | |
Drain to Source Breakdown Voltage | 20V | |
Pulsed Drain Current-Max (IDM) | 16A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Width | 4mm | |
Length | 5mm | |
Height | 1.25mm | |
RoHS Status | ROHS3 Compliant | |
Radiation Hardening | No | |
REACH SVHC | No SVHC | |
Lead Free | Lead Free |
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STS4DPF20L Documents
Download datasheets and manufacturer documentation for STS4DPF20L
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