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STS8DN6LF6AG Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer STMicroelectronics
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8A Ta
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, STripFET™ F6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STS8DN
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 3.2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 72 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 3.2W
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
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