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ULN2002A Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer STMicroelectronics
Factory Lead Time 15 Weeks
Contact Plating Gold
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-DIP (0.300, 7.62mm)
Number of Pins 16Pins
Weight 1.627801g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 1.1V
Number of Elements 7 Elements
Operating Temperature -40°C~85°C TA
Packaging Tube
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Terminal Position DUAL
Current Rating 500mA
Base Part Number ULN2002
Pin Count 16
Output Voltage 50V
Polarity NPN
Configuration COMPLEX
Number of Channels 7Channels
Transistor Application SWITCHING
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
VCEsat-Max 1.6 V
Height 4.59mm
Length 20mm
Width 7.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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