Taiwan Semiconductor BC337-40-B0 A1 Single BJT Transistors
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BC337-40-B0 A1 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Taiwan Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92 | |
| Package | Bag | |
| Mfr | Corsair | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 800 mA |
| Series | * | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Power - Max | 625 mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 5V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Frequency - Transition | 100MHz |
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