Taiwan Semiconductor GBLA02 Bridge Rectifiers
-55°C ~ 150°C (TJ) BRIDGE RECTIFIER DIODE 200 V
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GBLA02 Tech Specifications
| Category | Diodes - Bridge Rectifiers | |
| Manufacturer | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Surface Mount | NO | |
| Mounting Type | Through Hole | |
| Package / Case | 4-SIP, GBL | |
| Supplier Device Package | GBL | |
| Diode Element Material | SILICON | |
| Number of Terminals | 4Terminals | |
| Manufacturer Part Number | GBLA02 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Package Description | R-PSIP-T4 | |
| Risk Rank | 5.25 | |
| Number of Elements | 4 Elements | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Package | Tube | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Active | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Non-Compliant | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - |
| Packaging | GBL | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Capacitance | IR - 5uA | |
| Technology | Standard | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PSIP-T4 | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Voltage | VRRM - 200V | |
| Diode Type | BRIDGE RECTIFIER DIODE | |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V | |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 4 A | |
| Case Connection | ISOLATED | |
| Max Reverse Leakage Current | 5 µA | |
| Output Current-Max | 3 A | |
| Current - Average Rectified (Io) | 3 A | |
| Forward Voltage | 1 V | |
| Number of Phases | 1Phase | |
| Max Repetitive Reverse Voltage (Vrrm) | 200 V | |
| Rep Pk Reverse Voltage-Max | 200 V | |
| Non-rep Pk Forward Current-Max | 120 A | |
| Max Forward Surge Current (Ifsm) | 120 A | |
| Voltage - Peak Reverse (Max) | 200 V | |
| Max Junction Temperature (Tj) | 150 °C | |
| Breakdown Voltage-Min | 200 V |
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