BC338-40 B1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Taiwan Semiconductor
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Current-Collector (Ic) (Max) 800mA
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
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