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BC338-40 B1G Tech Specifications
Category | Transistors - Bipolar (BJT) - Single | |
Manufacturer | Taiwan Semiconductor | |
Factory Lead Time | 24 Weeks | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Supplier Device Package | TO-92 | |
Current-Collector (Ic) (Max) | 800mA | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Bulk | |
Published | 2014 |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Power - Max | 625mW | |
Transistor Type | NPN | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA 5V | |
Current - Collector Cutoff (Max) | 100nA ICBO | |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
Voltage - Collector Emitter Breakdown (Max) | 25V | |
Frequency - Transition | 100MHz | |
RoHS Status | ROHS3 Compliant |
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BC338-40 B1G Documents
Download datasheets and manufacturer documentation for BC338-40 B1G
- DatasheetsBC337-(16,25,40), BC338-(16,25,40)
- Environmental InformationTaiwan Semi RoHS3
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