Taiwan Semiconductor Corporation TSM850N06CX RFG Single MOSFETs Transistors
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TSM850N06CX RFG Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Taiwan Semiconductor | |
| Factory Lead Time | 25 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 3A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 1.7W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Digi-Reel® | |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 2.3A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 529pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant |
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TSM850N06CX RFG Documents
Download datasheets and manufacturer documentation for TSM850N06CX RFG
- Environmental InformationTaiwan Semi RoHS3
- DatasheetsTSM850N06CX
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