IN STOCK
Min. : 1
Mult. : 1




Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
VP1008B Tech Specifications
Category | Transistors - Special Purpose | |
Manufacturer | TEMIC | |
Surface Mount | NO | |
Number of Terminals | 3Terminals | |
Transistor Element Material | SILICON | |
Exterior Housing Material | 1 | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TEMIC SEMICONDUCTORS | |
Drain Current-Max (ID) | 0.79 A | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Type of cable accessories | cable chain | |
Bending radius | 150mm | |
Version | frames openable from inner radius | |
External height | 50mm | |
External width | 141.5mm | |
Internal height | 35mm | |
Internal width | 125mm | |
Gross weight | 1400 g |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Terminal Position | BOTTOM | |
Terminal Form | WIRE | |
Reach Compliance Code | unknown | |
JESD-30 Code | O-MBCY-W3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | P-CHANNEL | |
JEDEC-95 Code | TO-205AD | |
Drain-source On Resistance-Max | 5 Ω | |
Pulsed Drain Current-Max (IDM) | 3 A | |
DS Breakdown Voltage-Min | 100 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation Ambient-Max | 6.25 W | |
Length | 1040mm |
Select at least one checkbox above to show similar products in this category.
VP1008B Documents
Download datasheets and manufacturer documentation for VP1008B
- Datasheetsf963af9dd3add41eb7814983489591c8.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ