CSD19534Q5A Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Ta
Turn Off Delay Time 20 ns
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.2W Ta 63W Tc
Series NexFET™
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19534
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 14ns
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 55 mJ
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 7.4 pF
Width 6mm
Height 1.1mm
Length 4.9mm
Thickness 1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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