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CSD86330Q3D Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerLDFN
Number of Pins 8Pins
Turn Off Delay Time 15.8 ns
Usage Level Military grade
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 6W
Peak Reflow Temperature (Cel) 260
Number of Functions 1Function
Supply Voltage 12V
Terminal Pitch 0.65mm
Base Part Number CSD86330
Pin Count 8
Supply Voltage-Max (Vsup) 22V
Element Configuration Dual
Power Dissipation 6W
Turn On Delay Time 5.3 ns
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 9.6m Ω @ 14A, 8V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 20A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 8V
Input Characteristics STANDARD
Interface IC Type BUFFER OR INVERTER BASED MOSFET DRIVER
Drain to Source Breakdown Voltage 25V
FET Feature Logic Level Gate
High Side Driver NO
Nominal Vgs 1.4 V
Height 1.5mm
Length 3.3mm
Width 3.3mm
Thickness 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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