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CSD86350Q5D Tech Specifications
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Texas Instruments | |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
Factory Lead Time | 6 Weeks | |
Contact Plating | Gold, Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerLDFN | |
Number of Pins | 8Pins | |
Turn Off Delay Time | 24 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | NexFET™ | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 9Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Max Power Dissipation | 13W | |
Peak Reflow Temperature (Cel) | 260 | |
Number of Functions | 1Function | |
Terminal Pitch | 1.27mm | |
Base Part Number | CSD86350 | |
Pin Count | 9 | |
Output Voltage | 1.3V | |
Input Voltage-Nom | 12V | |
Analog IC - Other Type | SWITCHING REGULATOR | |
Element Configuration | Dual |
Power Dissipation | 13W | |
Turn On Delay Time | 9 ns | |
FET Type | 2 N-Channel (Half Bridge) | |
Input Voltage (Max) | 22V | |
Rds On (Max) @ Id, Vgs | 6m Ω @ 20A, 8V | |
Vgs(th) (Max) @ Id | 2.1V @ 250μA | |
Control Technique | PULSE WIDTH MODULATION | |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 12.5V | |
Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 4.5V | |
Rise Time | 23ns | |
Supply Current-Max (Isup) | 40mA | |
Drain to Source Voltage (Vdss) | 25V | |
Fall Time (Typ) | 21 ns | |
Switcher Configuration | BUCK | |
Continuous Drain Current (ID) | 40A | |
Threshold Voltage | 1.4V | |
Gate to Source Voltage (Vgs) | 8V | |
Switching Frequency-Max | 1500kHz | |
Drain to Source Breakdown Voltage | 25V | |
FET Feature | Logic Level Gate | |
Nominal Vgs | 1.3 V | |
Height | 1.5mm | |
Length | 5mm | |
Width | 6mm | |
Thickness | 1.5mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Contains Lead |
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