CSD87503Q3E Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Ta
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD87503
Configuration COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 15.6W
FET Type 2 N-Channel (Dual) Common Source
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 10A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 194 pF
Length 3.3mm
Width 3.3mm
Thickness 1mm
RoHS Status ROHS3 Compliant
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