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CSD88539ND Tech Specifications
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Texas Instruments | |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
Factory Lead Time | 6 Weeks | |
Contact Plating | Gold | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Weight | 540.001716mg | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 5 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | NexFET™ | |
JESD-609 Code | e4 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Max Power Dissipation | 2.1W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Base Part Number | CSD88539 | |
Element Configuration | Dual | |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W | |
Turn On Delay Time | 6 ns | |
FET Type | 2 N-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 28m Ω @ 5A, 10V | |
Vgs(th) (Max) @ Id | 3.6V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 741pF @ 30V | |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V | |
Rise Time | 9ns | |
Drain to Source Voltage (Vdss) | 60V | |
Fall Time (Typ) | 4 ns | |
Continuous Drain Current (ID) | 15A | |
Threshold Voltage | 3V | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 6.3A | |
Drain-source On Resistance-Max | 0.034Ohm | |
Drain to Source Breakdown Voltage | 60V | |
Pulsed Drain Current-Max (IDM) | 46A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Standard | |
Height | 1.75mm | |
Length | 4.9mm | |
Width | 3.91mm | |
Thickness | 1.58mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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