CSD88539ND Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 540.001716mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number CSD88539
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 46A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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