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- TC58NVM9S3EBAI3
Toshiba America Electronic Components TC58NVM9S3EBAI3 Memory Modules
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TC58NVM9S3EBAI3 Tech Specifications
| Category | Memory - Modules | |
| Manufacturer | Toshiba | |
| Surface Mount | YES | |
| Number of Terminals | 63Terminals | |
| Number of Words Code | 64000000Words Codes | |
| Number of Words | 67108864 wordsWord | |
| Package Description | VFBGA, | |
| Part Package Code | BGA | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Life Cycle Code | Obsolete | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Package Shape | RECTANGULAR | |
| Package Code | VFBGA | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -40 °C | |
| Operating Temperature-Max | 85 °C | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Terminal Position | BOTTOM |
| Terminal Form | BALL | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 63 | |
| JESD-30 Code | R-PBGA-B63 | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Operating Mode | ASYNCHRONOUS | |
| Organization | 64MX8 | |
| Seated Height-Max | 1 mm | |
| Memory Width | 8 | |
| Memory Density | 536870912 bit | |
| Parallel/Serial | SERIAL | |
| Memory IC Type | FLASH | |
| Programming Voltage | 3.3 V | |
| Width | 8.5 mm | |
| Length | 13 mm |
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TC58NVM9S3EBAI3 Documents
Download datasheets and manufacturer documentation for TC58NVM9S3EBAI3
- DatasheetsTOSCS28390-1.pdf
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