Toshiba America Electronic Components TK25E60X Specialized Transistors
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TK25E60X Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 20 Weeks | |
| Surface Mount | NO | |
| Contact plating | gold-plated | |
| Number of pins | 96pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Drain Current-Max (ID) | 25 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Type of connector | pin strips | |
| Connector | socket | |
| Kind of connector | female | |
| Spatial orientation | straight | |
| Contacts pitch | 2.54mm | |
| Electrical mounting | THT | |
| Connector pinout layout | 2x48 | |
| Row pitch | 2.54mm |
| Gross weight | 5.19 g | |
| Operating temperature | -40...163°C | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Current rating | 3A | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 306 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Rated voltage | 150V | |
| Profile | beryllium copper | |
| Plating thickness | 0.75µm | |
| Flammability rating | UL94V-0 |
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TK25E60X Documents
Download datasheets and manufacturer documentation for TK25E60X
- Datasheets2463d8c05a4321df591317b416aab254.pdf
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