TPN1R603PL Tech Specifications

Category Transistors - Special Purpose
Manufacturer Toshiba
Contact plating gold-plated
Surface Mount YES
Number of pins 4pins
Number of Terminals 8Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of connector pin strips
Connector socket
Kind of connector female
Spatial orientation straight
Contacts pitch 2.54mm
Electrical mounting THT
Connector pinout layout 2x2
Row pitch 2.54mm
Gross weight 0.22 g
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description ,
Drain Current-Max (ID) 80 A
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Operating temperature -40...163°C
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Current rating 1.5A
JESD-30 Code S-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0025 Ω
Pulsed Drain Current-Max (IDM) 200 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 52 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 104 W
Rated voltage 60V
Feedback Cap-Max (Crss) 200 pF
Profile beryllium copper
Plating thickness 0.75µm
Flammability rating UL94V-0
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