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TPN4R806PL Tech Specifications

Category Transistors - Special Purpose
Manufacturer Toshiba
Factory Lead Time 16 Weeks
Surface Mount YES
Contact plating gold-plated
Number of pins 1pin
Number of Terminals 8Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Drain Current-Max (ID) 105 A
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Type of connector pin strips
Connector socket
Kind of connector female
Spatial orientation straight
Contacts pitch 2.54mm
Electrical mounting THT
Connector pinout layout 1x1
Gross weight 0.1 g
Operating temperature -40...163°C
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Current rating 1.5A
JESD-30 Code S-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0048 Ω
Pulsed Drain Current-Max (IDM) 200 A
DS Breakdown Voltage-Min 60 V
Avalanche Energy Rating (Eas) 28 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 104 W
Rated voltage 60V
Feedback Cap-Max (Crss) 90 pF
Profile beryllium copper
Plating thickness 0.75µm
Flammability rating UL94V-0
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TPN4R806PL Documents

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