Toshiba Semiconductor and Storage 2SA1298-Y,LF Single BJT Transistors
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2SA1298-Y,LF Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Collector-Emitter Saturation Voltage | -400mV | |
| hFEMin | 40 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 200mW | |
| Power - Max | 200mW | |
| Gain Bandwidth Product | 120MHz | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA | |
| Max Breakdown Voltage | 25V | |
| Collector Base Voltage (VCBO) | -30V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Continuous Collector Current | -800mA | |
| RoHS Status | RoHS Compliant |
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