Toshiba Semiconductor and Storage 2SA1943-O(Q) Single BJT Transistors
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2SA1943-O(Q) Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PL | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 230V | |
| Collector-Emitter Saturation Voltage | -3V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2000 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| Voltage - Rated DC | -230V | |
| Max Power Dissipation | 150W | |
| Current Rating | -15A |
| Frequency | 30MHz | |
| Base Part Number | 2SA1943 | |
| Element Configuration | Single | |
| Power Dissipation | 150W | |
| Gain Bandwidth Product | 30MHz | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 230V | |
| Max Collector Current | 15A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V | |
| Current - Collector Cutoff (Max) | 5μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A | |
| Collector Base Voltage (VCBO) | 230V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 26mm | |
| Length | 20.5mm | |
| Width | 5.2mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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2SA1943-O(Q) Documents
Download datasheets and manufacturer documentation for 2SA1943-O(Q)
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