Toshiba Semiconductor and Storage 2SA2061(TE85L,F) Single BJT Transistors
200 2.5 A 1 W
IN STOCK
: 4462
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Mult. : 1
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2SA2061(TE85L,F) Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | TSM | |
| Mfr | Toshiba Semiconductor and Storage | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 2.5 A | |
| Emitter- Base Voltage VEBO | 7 V | |
| Pd - Power Dissipation | 625 mW | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 200 | |
| Collector-Emitter Saturation Voltage | 1.1 V | |
| Unit Weight | 0.000353 oz | |
| Minimum Operating Temperature | - | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | - | |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Maximum DC Collector Current | 2.5 A | |
| DC Current Gain hFE Max | 500 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 20 V | |
| Package Description | , |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 2SA2061(TE85L,F) | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Risk Rank | 5.57 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Reach Compliance Code | unknown | |
| Configuration | Single | |
| Power - Max | 625 mW | |
| Polarity/Channel Type | PNP | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 190mV @ 53mA, 1.6A | |
| Voltage - Collector Emitter Breakdown (Max) | 20 V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 20 V | |
| Power Dissipation-Max (Abs) | 1 W | |
| Collector Current-Max (IC) | 2.5 A | |
| DC Current Gain-Min (hFE) | 200 | |
| Continuous Collector Current | - 2.5 A | |
| Product Category | Bipolar Transistors - BJT |
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