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2SA2142(TE16L1,NQ) Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Supplier Device Package PW-MOLD
Number of Terminals 2Terminals
Transistor Element Material SILICON
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 500 mA
Transistor Polarity PNP
Factory Pack QuantityFactory Pack Quantity 2000
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Package Description SMALL OUTLINE, R-PSSO-G2
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 150 °C
Transition Frequency-Nom (fT) 35 MHz
Manufacturer Part Number 2SA2142(TE16L1,NQ)
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Risk Rank 1.57
Series -
Operating Temperature 150°C (TJ)
Packaging Reel
Subcategory Transistors
Technology Si
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PSSO-G2
Configuration SINGLE
Power Dissipation 15
Case Connection COLLECTOR
Power - Max 1 W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1V @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 600 V
Transition Frequency 35
Frequency - Transition 35MHz
Power Dissipation-Max (Abs) 15 W
Collector Current-Max (IC) 0.5 A
DC Current Gain-Min (hFE) 100
Continuous Collector Current 500
Collector-Emitter Voltage-Max 600 V
VCEsat-Max 1 V
Power Dissipation Ambient-Max 1 W
Product Category Bipolar Transistors - BJT
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