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- 2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage 2SC2714-Y(TE85L,F) RF BJT Transistors
20mA 20mA 30V
IN STOCK
: 30000
Min. : 1
Mult. : 1
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2SC2714-Y(TE85L,F) Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| hFEMin | 40 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2011 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Power Dissipation | 100mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G3 | |
| Element Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 550MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 20mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA 6V | |
| Gain | 23dB | |
| Transition Frequency | 550MHz | |
| Max Breakdown Voltage | 30V | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 4V | |
| Continuous Collector Current | 20mA | |
| Highest Frequency Band | VERY HIGH FREQUENCY B | |
| Noise Figure (dB Typ @ f) | 2.5dB @ 100MHz | |
| RoHS Status | RoHS Compliant |
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