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2SC2881-Y(TE12L,ZC Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Package / Case TO-243AA
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package PW-MINI
Number of Terminals 3Terminals
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 800 mA
Product Status Active
Mfr Toshiba Semiconductor and Storage
Transistor Polarity NPN
RoHS Non-Compliant
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 1 W
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 80
Collector-Emitter Saturation Voltage 1 V
Unit Weight 0.001764 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 1000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 120 MHz
Manufacturer Toshiba
Brand Toshiba
Maximum DC Collector Current 800 mA
DC Current Gain hFE Max 240
Collector- Emitter Voltage VCEO Max 120 V
Package Description SMALL OUTLINE, R-PSSO-F3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Transition Frequency-Nom (fT) 120 MHz
Manufacturer Part Number 2SC2881-Y(TE12L,ZC
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Risk Rank 5.36
Operating Temperature 150°C (TJ)
Series -
Packaging MouseReel
Subcategory Transistors
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code R-PSSO-F3
Configuration Single
Power Dissipation 1
Case Connection COLLECTOR
Power - Max 500 mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Transition Frequency 120
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120 V
Collector Current-Max (IC) 0.8 A
DC Current Gain-Min (hFE) 120
Continuous Collector Current 800
Collector-Emitter Voltage-Max 120 V
Product Category Bipolar Transistors - BJT
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