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- 2SC3324-BL(TE85L,F
Toshiba Semiconductor and Storage 2SC3324-BL(TE85L,F Single BJT Transistors
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2SC3324-BL(TE85L,F Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 120V | |
| Collector-Emitter Saturation Voltage | 300mV | |
| Number of Elements | 1 Element | |
| hFEMin | 200 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 150mW | |
| Frequency | 100MHz | |
| Element Configuration | Single | |
| Power Dissipation | 150mW | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | |
| Max Breakdown Voltage | 120V | |
| Collector Base Voltage (VCBO) | 120V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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