Toshiba Semiconductor and Storage 2SC4793(F,M) Single BJT Transistors
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2SC4793(F,M) Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Package / Case | TO-220-3 Full Pack | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220NIS | |
| hFEMin | 100 | |
| Collector-Emitter Breakdown Voltage | 230V | |
| Current-Collector (Ic) (Max) | 1A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 230V | |
| Max Power Dissipation | 2W | |
| Current Rating | 1A |
| Frequency | 100MHz | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Power - Max | 2W | |
| Gain Bandwidth Product | 100MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 230V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 230V | |
| Max Frequency | 100MHz | |
| Frequency - Transition | 100MHz | |
| Collector Base Voltage (VCBO) | 230V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Continuous Collector Current | 1A | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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2SC4793(F,M) Documents
Download datasheets and manufacturer documentation for 2SC4793(F,M)
- Datasheets2SC4793
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