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Toshiba Semiconductor and Storage 2SC5065-Y(TE85L,F) RF BJT Transistors
30mA 12V
IN STOCK
: 350
Min. : 1
Mult. : 1
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2SC5065-Y(TE85L,F) Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 16 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Collector-Emitter Breakdown Voltage | 12V | |
| hFEMin | 80 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 100mW |
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Power - Max | 100mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 30mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA 5V | |
| Gain | 12dB ~ 17dB | |
| Max Breakdown Voltage | 12V | |
| Frequency - Transition | 7GHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| RoHS Status | RoHS Compliant |
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