Toshiba Semiconductor and Storage 2SC5712(TE12L,F) Single BJT Transistors
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2SC5712(TE12L,F) Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Toshiba | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 140mV | |
| Number of Elements | 1 Element | |
| hFEMin | 400 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 1W | |
| Power Dissipation | 1W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 3A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 300mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 20mA, 1A | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 7V | |
| RoHS Status | RoHS Compliant |
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