2SK208-O(TE85L,F) Tech Specifications

Category Transistors - JFETs
Manufacturer Toshiba
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
HTS Code 8541.21.00.95
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Element Configuration Single
Operating Mode DEPLETION MODE
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8.2pF @ 10V
Continuous Drain Current (ID) 1.4mA
Gate to Source Voltage (Vgs) -5V
FET Technology JUNCTION
Current - Drain (Idss) @ Vds (Vgs=0) 600μA @ 10V
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Voltage - Breakdown (V(BR)GSS) 50V
Current Drain (Id) - Max 6.5mA
Radiation Hardening No
RoHS Status RoHS Compliant
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