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- 2SK208-R(TE85L,F)
Toshiba Semiconductor and Storage 2SK208-R(TE85L,F) JFETs Transistors
750μA -30V 300μA @ 10V
IN STOCK
: 27000
Min. : 1
Mult. : 1
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2SK208-R(TE85L,F) Tech Specifications
| Category | Transistors - JFETs | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 52 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 7.994566mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 125°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Power Dissipation | 100mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V | |
| Drain to Source Voltage (Vdss) | 10V | |
| Continuous Drain Current (ID) | 750μA | |
| Gate to Source Voltage (Vgs) | -30V | |
| FET Technology | JUNCTION | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 300μA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 400mV @ 100nA | |
| Voltage - Breakdown (V(BR)GSS) | 50V | |
| Current Drain (Id) - Max | 6.5mA | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Width | 1.5mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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