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Toshiba Semiconductor and Storage 2SK2145-Y(TE85L,F) JFETs Transistors
14mA -30V 1.2mA @ 10V
IN STOCK
: 4725
Min. : 1
Mult. : 1
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2SK2145-Y(TE85L,F) Tech Specifications
| Category | Transistors - JFETs | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 52 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 125°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| Additional Feature | LOW NOISE |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Dual | |
| Operating Mode | DEPLETION MODE | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | AMPLIFIER | |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 10V | |
| Drain to Source Voltage (Vdss) | 10V | |
| Continuous Drain Current (ID) | 14mA | |
| Gate to Source Voltage (Vgs) | -30V | |
| FET Technology | JUNCTION | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 200mV @ 100nA | |
| RoHS Status | RoHS Compliant |
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