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- DF2B6M5SL,L3F
Toshiba Semiconductor and Storage DF2B6M5SL,L3F TVS Diodes
2.5A 8/20μs
IN STOCK
: 27
Min. : 1
Mult. : 1
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DF2B6M5SL,L3F Tech Specifications
| Category | TVS - Diodes | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 0201 (0603 Metric) | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Type | Zener | |
| Applications | General Purpose | |
| Additional Feature | LOW CAPACITANCE |
| Terminal Position | DUAL | |
| JESD-30 Code | R-PDSO-N2 | |
| Polarity | BIDIRECTIONAL | |
| Configuration | SINGLE | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 5.5V | |
| Power - Peak Pulse | 37W | |
| Current - Peak Pulse (10/1000μs) | 2.5A 8/20μs | |
| Voltage - Clamping (Max) @ Ipp | 26.5V Typ | |
| Voltage - Reverse Standoff (Typ) | 5V Max | |
| Bidirectional Channels | 1 | |
| Rep Pk Reverse Voltage-Max | 5V | |
| Capacitance @ Frequency | 0.3pF @ 1MHz | |
| Non-rep Peak Rev Power Dis-Max | 37W | |
| RoHS Status | RoHS Compliant |
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DF2B6M5SL,L3F Documents
Download datasheets and manufacturer documentation for DF2B6M5SL,L3F
- DatasheetsDF2B6M5SL
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