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HN1B01FU-GR,LXHF Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 150mA
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 200 mW
Transistor Polarity NPN, PNP
Maximum Operating Temperature + 125 C
DC Collector/Base Gain hfe Min 120 at 2 mA, 6 V
Collector-Emitter Saturation Voltage 100 mV
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 120 MHz, 150 MHz
Collector- Emitter Voltage VCEO Max 50 V
Series Automotive, AEC-Q101
Operating Temperature -
Technology Si
Configuration Dual
Power - Max 200mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 120MHz, 150MHz
Collector Base Voltage (VCBO) 60 V
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