Toshiba Semiconductor and Storage HN1B04FE-GR,LXHF Arrays BJT Transistors
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HN1B04FE-GR,LXHF Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Toshiba | |
| Package / Case | SOT-563, SOT-666 | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | ES6 | |
| Current-Collector (Ic) (Max) | 150mA | |
| Product Status | Active | |
| Mfr | Toshiba Semiconductor and Storage | |
| Qualification | AEC-Q200 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 100 mW | |
| Transistor Polarity | NPN, PNP | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 120 at 2 mA, 6 V | |
| Collector-Emitter Saturation Voltage | 100 mV | |
| Factory Pack QuantityFactory Pack Quantity | 4000 | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | 80 MHz | |
| Part # Aliases | HN1B04FE-GR,LXHF(B | |
| Manufacturer | Toshiba |
| Brand | Toshiba | |
| DC Current Gain hFE Max | 400 at 2 mA, 6 V | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Dual | |
| Power - Max | 100mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN, PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 80MHz | |
| Collector Base Voltage (VCBO) | 50 V | |
| Continuous Collector Current | 150 mA | |
| Product Category | Bipolar Transistors - BJT |
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