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Toshiba Semiconductor and Storage MT3S111P(TE12L,F) RF BJT Transistors
IN STOCK
: 6000
Min. : 1
Mult. : 1
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MT3S111P(TE12L,F) Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Surface Mount | YES | |
| Current-Collector (Ic) (Max) | 100mA | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Configuration | Single | |
| Power - Max | 1W | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA 5V | |
| Gain | 10.5dB | |
| Voltage - Collector Emitter Breakdown (Max) | 6V | |
| Transition Frequency | 6000MHz | |
| Frequency - Transition | 8GHz | |
| Power Dissipation-Max (Abs) | 0.3W | |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz | |
| RoHS Status | RoHS Compliant |
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