Toshiba Semiconductor and Storage MT3S20TU(TE85L) RF BJT Transistors
80mA 80mA 12V
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MT3S20TU(TE85L) Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, Flat Lead | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Operating Temperature | 150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 900mW | |
| Reach Compliance Code | unknown |
| Element Configuration | Single | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 80mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 5V | |
| Gain | 12dB | |
| Transition Frequency | 5000MHz | |
| Max Breakdown Voltage | 12V | |
| Frequency - Transition | 7GHz | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 80mA | |
| Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V | |
| RoHS Status | RoHS Compliant |
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