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- RN1313,LF
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RN1313,LF Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Supplier Device Package | USM | |
| Mfr | Toshiba Semiconductor and Storage | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Transistor Polarity | NPN | |
| Qualification | AEC-Q101 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 150 mW | |
| Maximum Operating Temperature | + 125 C | |
| DC Collector/Base Gain hfe Min | 120 | |
| Unit Weight | 0.000212 oz | |
| Typical Input Resistor | 47 kOhms | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Peak DC Collector Current | 100 mA | |
| Channel Mode | Enhancement |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Maximum DC Collector Current | 100 mA | |
| Maximum Operating Frequency | 250 MHz | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Series | Automotive, AEC-Q101 | |
| Packaging | Cut Tape | |
| Subcategory | Transistors | |
| Configuration | Single | |
| Power - Max | 100 mW | |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 250 MHz | |
| Resistor - Base (R1) | 47 kOhms | |
| Continuous Collector Current | 100 | |
| Product Category | Bipolar Transistors - Pre-Biased |
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