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RN1402,LF Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package S-Mini
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Element Configuration Single
Power - Max 200mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Radiation Hardening No
RoHS Status RoHS Compliant
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RN1402,LF Documents

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