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- RN1903,LF(CT
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RN1903,LF(CT Tech Specifications
Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
Manufacturer | Toshiba | |
Factory Lead Time | 12 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 50V | |
Number of Elements | 2 Elements | |
Operating Temperature (Max.) | 150°C | |
Packaging | Cut Tape (CT) | |
Published | 2014 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Max Power Dissipation | 200mW | |
Terminal Form | GULL WING |
Reach Compliance Code | unknown | |
JESD-30 Code | R-PDSO-G6 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
Power - Max | 200mW | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | NPN | |
Transistor Type | 2 NPN - Pre-Biased (Dual) | |
Collector Emitter Voltage (VCEO) | 300mV | |
Max Collector Current | 100mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA 5V | |
Current - Collector Cutoff (Max) | 100nA ICBO | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
Transition Frequency | 250MHz | |
Max Breakdown Voltage | 50V | |
Frequency - Transition | 250MHz | |
Resistor - Base (R1) | 22k Ω | |
Resistor - Emitter Base (R2) | 22k Ω | |
RoHS Status | RoHS Compliant |
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RN1903,LF(CT Documents
Download datasheets and manufacturer documentation for RN1903,LF(CT
- DatasheetsRN1901-06
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