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SSM3J328R,LF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 107 ns
Operating Temperature 150°C TJ
Packaging Digi-Reel®
Series U-MOSVI
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position DUAL
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 32 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29.8m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.0298Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 24A
Radiation Hardening No
RoHS Status RoHS Compliant
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