Toshiba Semiconductor and Storage SSM3K329R,LF Single MOSFETs Transistors
3.5A
IN STOCK
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SSM3K329R,LF Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-3 Flat Leads | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.5A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1W Ta | |
| Turn Off Delay Time | 6.4 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | U-MOSIII | |
| Published | 2007 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1W | |
| Turn On Delay Time | 9.2 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 126m Ω @ 1A, 4V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 123pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4V | |
| Vgs (Max) | ±12V | |
| Continuous Drain Current (ID) | 3.5A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | 30V | |
| Height | 880μm | |
| RoHS Status | RoHS Compliant |
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