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TDTC123J,LM Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Toshiba
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Pd - Power Dissipation 320 mW
Transistor Polarity NPN
Typical Input Resistor 2.2 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Peak DC Collector Current 100 mA
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Maximum DC Collector Current 100 mA
Collector- Emitter Voltage VCEO Max 50 V
Series -
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 320 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Resistor - Base (R1) 2.2 kOhms
Continuous Collector Current 100 mA
Product Category Bipolar Transistors - Pre-Biased
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