Toshiba Semiconductor and Storage TLP185(GB,E)
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TLP185(GB,E) Tech Specifications
| Category | Optoisolators - Transistor, Photovoltaic Output | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SOIC (0.173, 4.40mm Width), 4 Leads | |
| Number of Pins | 4Pins | |
| Manufacturer Package Identifier | 11-4M1S | |
| Collector-Emitter Breakdown Voltage | 80V | |
| Collector-Emitter Saturation Voltage | 300mV | |
| Current Transfer Ratio-Min | 100% @ 5mA | |
| Published | 2012 | |
| Operating Temperature | -55°C~110°C | |
| Packaging | Tube | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW | |
| Voltage - Isolation | 3750Vrms | |
| Output Type | Transistor |
| Number of Channels | 1Channel | |
| Power Dissipation | 200mW | |
| Voltage - Forward (Vf) (Typ) | 1.25V | |
| Input Type | DC | |
| Forward Current | 20mA | |
| Max Output Voltage | 80V | |
| Output Current per Channel | 50mA | |
| Collector Emitter Voltage (VCEO) | 80V | |
| Max Collector Current | 10mA | |
| Rise / Fall Time (Typ) | 5μs 9μs | |
| Reverse Breakdown Voltage | 5V | |
| Max Input Current | 20mA | |
| Current Transfer Ratio (Max) | 400% @ 5mA | |
| Turn On / Turn Off Time (Typ) | 9μs, 9μs | |
| Vce Saturation (Max) | 300mV | |
| Height | 2.3mm | |
| RoHS Status | RoHS Compliant | |
| Radiation Hardening | No |
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TLP185(GB,E) Documents
Download datasheets and manufacturer documentation for TLP185(GB,E)
- DatasheetsTLP185
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